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J. Jorudas
J. Jorudas
Optoelectronics
Terahertz radiation
Physics
Optics
High-electron-mobility transistor
4
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12
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Anomalous sub-THz detection by GaN/AlGaN FinFETs
2020
M. Dub
P. Sai
D. B. But
J. Jorudas
Irmantas Kašalynas
M. Sakowicz
G. Cywiński
S Rumyantsev
W. Knap
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Low frequency noise and trap density in GaN/AlGaN field effect transistors
2019
Applied Physics Letters
P. Sai
J. Jorudas
M. Dub
M. Sakowicz
Vytautas Jakštas
Dmytro B. But
Pawel Prystawko
G. Cywinski
Irmantas Kašalynas
W. Knap
Sergey Rumyantsev
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Development of the planar AlGaN/GaN bow-tie diodes for terahertz detection
2019
IRMMW-THz | International Conference on Infrared, Millimeter, and Terahertz Waves
J. Jorudas
J. Malakauskaite
L. Subacius
V. Janonis
Vytautas Jakštas
V. Kovalevskij
Irmantas Kašalynas
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Electrically-controlled THz emission from AlGaN/GaN/Al2O3 high electron mobility transistor structures at a temperature of 20 K
2019
IRMMW-THz | International Conference on Infrared, Millimeter, and Terahertz Waves
I. Grigelionis
Pawel Prystawko
J. Jorudas
Irmantas Kašalynas
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