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Shigeto Honda
Shigeto Honda
Mitsubishi Electric
Electronic engineering
Engineering
Electrical engineering
Insulated-gate bipolar transistor
Power semiconductor device
6
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29
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Multidirectional Development of IGBTs and Diodes:Low Loss and Tough but Gentle (User-friendly) Power Devices
2019
Iet Power Electronics
Shigeto Honda
Tadaharu Minato
Kazuhiro Shimizu
Akihiko Furukawa
Yoshiaki Terasaki
Kazunari Hatade
Yoshifumi Takata
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High voltage device edge termination for wide temperature range plus humidity with surface charge control (SCC) technology
2016
ISPSD | International Symposium on Power Semiconductor Devices and IC's
Shigeto Honda
Tatsuo Harada
Akito Nishii
Ze Chen
Kazuhiro Shimizu
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Next generation 600V CSTBT™ with an advanced fine pattern and a thin wafer process technologies
2012
ISPSD | International Symposium on Power Semiconductor Devices and IC's
Shigeto Honda
Yuki Haraguchi
Atsushi Narazaki
Tomohide Terashima
Yoshiaki Terasaki
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Citations (13)
Power semiconductor device and process for producing same
2011
Ryoichi Fujii
Shigeto Honda
Kaoru Motonami
Atsushi Narazaki
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600V LPT-CSTBT™ on advanced thin wafer technology
2011
ISPSD | International Symposium on Power Semiconductor Devices and IC's
Yuki Haraguchi
Shigeto Honda
Kazunari Nakata
Atsushi Narazaki
Yoshiaki Terasaki
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A concept of a novel edge termination technique: Junction termination (RJT)
2010
ISPSD | International Symposium on Power Semiconductor Devices and IC's
Shigeto Honda
Ryoich Fujii
Tsuyoshi Kawakami
Seiji Fujioka
Atsushi Narazaki
Kaoru Motonami
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Citations (1)
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