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Kwang-Shik Shin
Kwang-Shik Shin
Samsung
Physics
NAND gate
Electronic engineering
Flash memory
Optoelectronics
3
Papers
30
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A highly manufacturable integration technology for 27nm 2 and 3bit/cell NAND flash memory
2010
IEDM | International Electron Devices Meeting
Choong-ho Lee
Suk-kang Sung
Dong-Hoon Jang
Se-Hoon Lee
Seungwook Choi
Jong-Hyuk Kim
Se Jun Park
Min-Sung Song
Hyun-Chul Baek
Eungjin Ahn
Jinhyun Shin
Kwang-Shik Shin
Kyunghoon Min
Sung-Soon Cho
Chang Jin Kang
Jung Dal Choi
Keon-Soo Kim
Jeong-Hyuk Choi
Kang-Deog Suh
Tae-Sung Jung
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70nm NAND flash technology with 0.025 /spl mu/m/sup 2/ cell size for 4Gb flash memory
2003
IEDM | International Electron Devices Meeting
Yong-Sik Yim
Kwang-Shik Shin
Sung-Hoi Hur
Jae Duk Lee
Ihn-Gee Balk
Hong-Soo Kim
Soo-Jin Chai
Eun-Young Choi
Min-Cheol Park
Dong-Seok Eun
Sung-Bok Lee
Hye-Jin Lim
Sun-pil Youn
Sung-Hun Lee
Tae-Jung Kim
Han Soo Kim
Kyu-Charn Park
Kinam Kim
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A 0.15 /spl mu/m NAND flash technology with 0.11 /spl mu/m/sup 2/ cell size for 1 Gbit flash memory
2000
IEDM | International Electron Devices Meeting
Jung Dal Choi
Joon-hee Lee
Won-Hong Lee
Kwang-Shik Shin
Yong-Sik Yim
Jae-Duk Lee
Yoocheol Shin
Sung-nam Chang
Kyu-Charn Park
Jongwoo Park
Chang-Gyu Hwang
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Citations (6)
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