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Jinhyun Shin
Jinhyun Shin
Samsung
Electronic engineering
NAND gate
Physics
Flash memory
Optoelectronics
2
Papers
25
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A highly manufacturable integration technology for 27nm 2 and 3bit/cell NAND flash memory
2010
IEDM | International Electron Devices Meeting
Choong-ho Lee
Suk-kang Sung
Dong-Hoon Jang
Se-Hoon Lee
Seungwook Choi
Jong-Hyuk Kim
Se Jun Park
Min-Sung Song
Hyun-Chul Baek
Eungjin Ahn
Jinhyun Shin
Kwang-Shik Shin
Kyunghoon Min
Sung-Soon Cho
Chang Jin Kang
Jung Dal Choi
Keon-Soo Kim
Jeong-Hyuk Choi
Kang-Deog Suh
Tae-Sung Jung
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A 2 Gb NAND flash memory with 0.044 /spl mu/m/sup 2/ cell size using 90 nm flash technology
2002
IEDM | International Electron Devices Meeting
Dong-chan Kim
Wang Chul Shin
Jae Duk Lee
Jinhyun Shin
Joon-hee Lee
Sung-Hoi Hur
Ihn-gee Baik
Yoo-Choel Shin
Chang-Hyun Lee
Jae-Sun Yoon
Heon-Guk Lee
Kwon-Soon Jo
Seungwook Choi
Byung-Kwan You
Jeong-Hyuk Choi
Donggun Park
Kinam Kim
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Citations (12)
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