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B. van Schravendijk
B. van Schravendijk
Siemens
Materials science
Plasma
Electronic engineering
Electromigration
Dielectric
3
Papers
15
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Highly Reliable Interface of Self-aligned CuSiN process with Low-k Sic barrier dielectric (k3.5) for 65nm node and beyond
2006
IITC | International Interconnect Technology Conference
Tatsuya Usami
T. Ide
Y. Kakuhara
Y. Ajima
Kazuyoshi Ueno
T. Maruyama
Yongsik Yu
E. Apen
Kaushik Chattopadhyay
B. van Schravendijk
Noriaki Oda
M. Sekine
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Citations (8)
FSG process development for copper/damascene technology
2001
IITC | International Interconnect Technology Conference
J. S. Martin
Kelly J. Taylor
J. D. Luttmer
A.K.R. Ralston
Jeff West
T.D. Bonifield
E.M. Mickler
S. Bolnedi
C.T. Adams
K. H. Chew
Atiye Bayman
B. van Schravendijk
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A low redeposition rate high density plasma CVD process for high aspect ratio 175 nm technology and beyond
1999
IITC | International Interconnect Technology Conference
G.Y. Lee
T.H. Ivers
G.D. Papasouliotis
E.W. Kiewra
X.J. Ning
B. van Schravendijk
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Citations (4)
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