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Takatoshi Kameshima

Sony Broadcast & Professional Research Laboratories

3

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0.9µm pitch pixel CMOS image sensor design methodology

2009 IEDM | International Electron Devices Meeting
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A Study of Adhesion and Improvement of Adhesion Energy Using Hybrid Low-k (porous-PAr/ porous-SiOC(k=2.3/2.3)) Structures with Multi-layered Cu Interconnects for 45-nm Node Devices

2007 IITC | International Interconnect Technology Conference
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Robust 45-nm Node Cu/LJLK Interconnects using Effective Porogen Control

2006 IITC | International Interconnect Technology Conference
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