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A. I. Pechnikov
A. I. Pechnikov
Ioffe Institute
Epitaxy
Halide
Analytical chemistry
Sapphire
Chemistry
5
Papers
25
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Polymorphism and Faceting in Ga 2 O 3 Layers Grown by HVPE at Various Gallium‐to‐Oxygen Ratios
2021
Physica Status Solidi B-basic Solid State Physics
S. V. Shapenkov
Oleg Vyvenko
V.I. Nikolaev
Sergei Stepanov
A. I. Pechnikov
M. P. Scheglov
Georgiy Varygin
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Electrical properties and deep trap spectra in Ga2O3 films grown by halide vapor phase epitaxy on p-type diamond substrates
2021
Journal of Applied Physics
Alexander Y. Polyakov
V.I. Nikolaev
S.A. Tarelkin
A. I. Pechnikov
S. I. Stepanov
Andrey E. Nikolaev
Ivan Shchemerov
Eugene B. Yakimov
Nikolay V. Luparev
M. S. Kuznetsov
A A Vasilev
Anastasiya I. Kochkova
M. I. Voronova
M. P. Scheglov
Jihyun Kim
Stephen J. Pearton
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Citations (2)
Editors' Choice—Electrical Properties and Deep Traps in α-Ga2O3:Sn Films Grown on Sapphire by Halide Vapor Phase Epitaxy
2020
ECS Journal of Solid State Science and Technology
A.Y. Polyakov
V.I. Nikolaev
S. I. Stepanov
A. I. Pechnikov
Eugene B. Yakimov
N. B. Smirnov
I. V. Shchemerov
A. A. Vasilev
A. I. Kochkova
A.V. Chernykh
S. J. Pearton
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Citations (7)
Thick α-Ga2O3 Layers on Sapphire Substrates Grown by Halide Epitaxy
2019
Semiconductors
A. I. Pechnikov
S.I. Stepanov
A.V. Chikiryaka
M. P. Scheglov
M. A. Odnobludov
V.I. Nikolaev
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Citations (14)
Growth of Ga 2 O 3 Regular Column Structures by Halide Vapour Phase Epitaxy: $\alpha$ - and $\varepsilon$ -phase Relation
2019
IPRM | International Conference on Indium Phosphide and Related Materials
V.I. Nikolaev
A. I. Pechnikov
V. V. Nikolaev
M.P. Sheglov
A.V. Chikiryaka
S. I. Stepanov
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Citations (2)
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