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A. Amo
A. Amo
Renesas Electronics
Optoelectronics
Nanoclusters
Threshold voltage
Monolayer
High-κ dielectric
4
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5
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Fabrication and Evaluation of Split-Gate Type Charge-Trapping Nonvolatile Memory with High-k Trapping and Blocking Layers for Embedded Flash
2021
IWJT | International Workshop on Junction Technology
Y. Z. Wang
A. Amo
E. Tsukuda
Kenichiro Sonoda
R. Ogura
S. Kimura
Tomoya Saito
Tadashi Yamaguchi
T. Mihara
Masao Inoue
T. Ogata
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Sub-6V Operation of Split-Gate Type Charge-Trapping Nonvolatile Memory with High-k Trapping and Blocking Layers for High-Speed and HighlyReliable Embedded Flash
2020
IMW | International Memory Workshop
Y. Z. Wang
A. Amo
Keiichi Maekawa
K. Uchimura
K. Sonoda
R. Ogura
S. Kimura
Tomoya Saito
T. Maruyama
Masao Inoue
Hiroshi Yanagita
Tomohiro Yamashita
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Impact of Homogeneously Dispersed Al Nanoclusters by Si-monolayer Insertion into Hf 0.5 Zr 0.5 O 2 Film on FeFET Memory Array with Tight Threshold Voltage Distribution
2019
IEDM | International Electron Devices Meeting
Keiichi Maekawa
Tomohiro Yamashita
Tadashi Yamaguchi
T. Ohara
A. Amo
E. Tsukuda
Kenichiro Sonoda
Hiroshi Yanagita
Masao Inoue
M. Matsuura
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Impact of Homogeneously Dispersed Al Nanoclusters by Si-monolayer Insertion into Hf 0.5 Zr 0.5 O 2 Film on FeFET Memory Array with Tight Threshold Voltage Distribution
2019
Keiichi Maekawa
Tomohiro Yamashita
Tadashi Yamaguchi
T. Ohara
A. Amo
E. Tsukuda
K. Sonoda
Hiroshi Yanagita
Masao Inoue
M. Matsuura
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