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Morifuji E
Morifuji E
CMOS
Reliability (semiconductor)
Materials science
Optoelectronics
Time-dependent gate oxide breakdown
2
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デジタル処理および移動アプリケーション用の0.495μm 2 SRAMをもつ65nm低電力CMOSプラットホーム
2005
VLSIT | Symposium on VLSI Technology
K. Utsumi
Morifuji E
M. Kanda
S. Aota
T. Yoshida
K. Honda
Matsubara Y
S. Yamada
Fumiyoshi Matsuoka
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0.25μm CoSi2 salicide CMOS technology thermally stable up to 1,000°C with high TDDB reliability.
1997
VLSIT | Symposium on VLSI Technology
Tatsuya Ohguro
S Nakamura
Morifuji E
Takashi Yoshitomi
Toyota Morimoto
Harakawa H
Momose H S
Katsumata Y
Hiroshi Iwai
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