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A. Masad
A. Masad
Intel
Electronic engineering
Electrical engineering
Engineering
Lithography
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3
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21
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A 45nm NOR Flash Technology with Self-Aligned Contacts and 0.024μm 2 Cell Size for Multi-level Applications
2008
VLSI-TSA | International Symposium on VLSI Technology, Systems, and Applications
Richard Fastow
R. Banerjee
P. Bjeletich
Adam Brand
H. Chao
J. Gorman
X. Guo
J.B. Heng
N. Koenigsfeld
Sean Ma
A. Masad
S. Soss
B.J. Woo
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Citations (13)
A Scalable Self-Aligned Contact NOR Flash Technology
2007
VLSIT | Symposium on VLSI Technology
M. Wei
R. Banerjee
L. Zhang
A. Masad
S. Reidy
J. Ahn
H. Chao
C. Lim
T. Castro
Karpenko
M. Ru
R. Fastow
A. Brand
X. Guo
J. Gorman
W.J. McMahon
B.J. Woo
A. Fazio
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Citations (8)
A 45nmNOR Flash Technology withSelf-Aligned Contacts and 0.024ptm2 Cell SizeforMulti-level Applications
2007
Richard Fastow
R. Banerjee
P. Bjeletich
Adam Brand
H. Chao
J. Gorman
X. Guo
J.B. Heng
N. Koenigsfeld
Sean Ma
A. Masad
S. Soss
B.J. Woo
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