Three methods for the growth of InGaN nanostructures by MOVPE

InGaN nanostructures have been grown (i) by a droplet epitaxy route, (ii) by pre-treatment of the GaN pseudo-substrate with SiH4 and NH3, and (iii) by annealing an InGaN epilayer under a H2 flux. The various methodologies are discussed in the context of possible device applications and of studies of the physics of single nitride quantum dots. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)