Zinc-Deficiency Induced g-C 3 N 4 Nanosheets: Photocatalytic Nitrogen Fixation Study and Carrier Dynamics

g-C3N4 has great application prospect in the field of photocatalytic nitrogen fixation owing to the advantages of abundant raw materials, low toxicity, low consumption, high efficiency and stability. However, the low surface-active site and high carrier recombination rate limit their nitrogen fixation activities. Defect regulation is one of the effective methods to improve photocatalytic nitrogen fixation activity. In this paper, g-C3N4 nanosheets are successfully modified by ZnS containing zinc vacancy, which enhanced the carrier transport capacity and active site of g-C3N4 for photocatalytic nitrogen fixation. Thus, without any sacrificial agent, an optimized nitrogen fixation activity of 2.1 µmol·h−1 (105 µmol·h−1·g−1) is achieved with the irradiation of visible light, which presents obvious advantages among the latest reported g-C3N4 related photocatalysts. The morphology, structure and photocatalytic carrier dynamics of the photocatalyst are studied by a series of experimental characterizations.