Demonstration of BEOL-compatible ferroelectric Hf 0.5 Zr 0.5 O 2 scaled FeRAM co-integrated with 130nm CMOS for embedded NVM applications

We demonstrate successful scalability of conventional 100μm diameter TiN/HZO/TiN capacitors down to 300nm by successfully co-integrating them for the first time in the Back-End-Of-Line of 130nm CMOS technology. Excellent performance are reported on those scaled bitcells, such as remnant polarization 2.PR > 40μC/cm2, endurance > 1011 cycles, switching speeds < 100ns, operating voltages < 4V, and data retention at 125°C. Presented results pave the way to < 10fJ/bit ultra-low power FeRAM for IoT applications.