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N. Vaxelaire
N. Vaxelaire
Optoelectronics
Ferroelectricity
Voltage
Data retention
Silicon
5
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28
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Nanosecond Laser Anneal (NLA) for Si-implanted HfO2 Ferroelectric Memories Integrated in Back-End Of Line (BEOL)
2020
VLSIT | Symposium on VLSI Technology
Laurent Grenouillet
T. François
J. Coignus
S. Kerdiles
N. Vaxelaire
C. Carabasse
Furqan Mehmood
S. Chevalliez
C. Pellissier
F. Triozon
Frédéric Mazen
G. Rodriguez
T. Magis
Viktor Havel
Stefan Slesazeck
F. Gaillard
Uwe Schroeder
T. Mikolajick
E. Nowak
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Performance assessment of BEOL-integrated HfO 2 -based ferroelectric capacitors for FeRAM memory arrays
2020
SNW | IEEE Silicon Nanoelectronics Workshop
L. Grenouillet
T. François
J. Coignus
N. Vaxelaire
C. Carabasse
F. Triozon
Claudia Richter
Uwe Schroeder
E. Nowak
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Citations (1)
Ferroelectric HfO2 for Memory Applications: Impact of Si Doping Technique and Bias Pulse Engineering on Switching Performance
2019
IMW | International Memory Workshop
T. Francois
Jean Coignus
Laurent Grenouillet
J P Barnes
N. Vaxelaire
Julien Ferrand
I. Bottala-Gambetta
Mickael Gros-Jean
Simon Jeannot
P. Boivin
P. Chiquet
Marc Bocquet
E. Nowak
F. Gaillard
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Demonstration of BEOL-compatible ferroelectric Hf 0.5 Zr 0.5 O 2 scaled FeRAM co-integrated with 130nm CMOS for embedded NVM applications
2019
IEDM | International Electron Devices Meeting
T. François
C. Pellissier
Stefan Slesazeck
Viktor Havel
Claudia Richter
A. Makosiej
B. Giraud
Evelyn T. Breyer
Monica Materano
P. Chiquet
Marc Bocquet
L. Grenouillet
E. Nowak
Uwe Schroeder
F. Gaillard
J. Coignus
Philippe Blaise
C. Carabasse
N. Vaxelaire
T. Magis
F. Aussenac
Virginie Loup
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Citations (17)
Improvement of HfO 2 based RRAM array performances by local Si implantation
2017
IEDM | International Electron Devices Meeting
Marios Barlas
Alessandro Grossi
Laurent Grenouillet
Elisa Vianello
Emmanuel Nolot
N. Vaxelaire
P. Blaise
B. Traore
Jean Coignus
F. Perrin
R. Crochemore
F. Mazen
Laurent Lachal
S. Pauliac
C. Pellissier
S. Bernasconi
Sophie Chevalliez
J.-F. Nodin
L. Perniola
Etienne Nowak
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Citations (5)
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