Nanosecond Laser Anneal (NLA) for Si-implanted HfO2 Ferroelectric Memories Integrated in Back-End Of Line (BEOL)

10nm Si-implanted HfO 2 is demonstrated to be ferroelectric for the first time when integrated in a Back- End-Of - Line (BEOL) 130nm CMOS. Scaled $.28\mu \mathrm{m}^{2}$ . capacitors demonstrate excellent endurance (109 cycles measured at 4 V, extrapolated to be 1012 at 3V), with tight coercive field distributions at wafer scale and excellent data retention at 85°C. To extend the ferroelectric BEOL compatibility of 10nm or thinner HfO 2 - based films, but also to understand their crystallization dynamics, nanosecond laser anneal is demonstrated to be very appealing, even for undoped HfO 2 .