Epitaxial growth of graphene on SiC by Si selective etching using SiF4 in an inert ambient

Epitaxial graphene growth on SiC by Si selective etching using tetrafluorosilane (SiF4) is introduced, where SiF4 in Ar ambient selectively etches Si from the SiC surface at temperatures 1400 °C or above, leaving the C as graphene. Raman spectra of SiC treated in Ar for 60 min at 300 Torr did not show a graphene G-peak. However, with the addition of SiF4, a clear G-peak was observed for the surface treated for only 1 min, demonstrating faster Si removal using SiF4. Si selective etching of SiC is explained by the Gibbs free energy, where Si removal is more favorable compared to C removal by SiF4.