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Fabrication of Poly-Si TFT on Polycarbonate Substrate at Temperatures below 135 o C
Fabrication of Poly-Si TFT on Polycarbonate Substrate at Temperatures below 135 o C
2010
G. Nakagawa
N. Kawamoto
T Imamura
Y. Tomizawa
T. Miyoshi
K. Tadatomo
T. Asano
Keywords:
Nanotechnology
Polycarbonate
Substrate (chemistry)
Thin-film transistor
Composite material
Materials science
Fabrication
Chemical engineering
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