MOVPE growth of InGaAsP laser diodes using tertiarybutylarsine and tertiarybutylphosphine

metalorganic vapor phase epitaxy (MOVPE) growth is a very useful technique both for making the abrupt heterointerfaces used in advanced III-V semiconductor devices, such as HEMTs and Multiple Quantum Well (MQW) laser diodes, and for growing on large-scale and multiple wafers. Doping into the crystal is an important factor in device fabrication. The readers studied the surface morphology and doping efficiency in intentional doping when their grew InP crystals using tertiarybutylphosphine (TBP) as the group V source, and compared them with the case using PH3. The first growth of the active and cladding layers was by MOVPE using tertiarybutylarsine and TBP, and the second growth of embedded layers and the third growth of contact layers were by liquid-phase epitaxy.