Model-based metrology of resist patterns in lithography

Arie Jeffrey Den Boef,Hugo Augustinus Joseph Cramer,Paul Hinnen,Henry Megens,Michael Kubis,Maurits van der Schaar,Kaustuve Bhatacharrya,Noelle Wright

Model-based metrology of resist patterns in lithography

2011

Arie Jeffrey Den Boef
Hugo Augustinus Joseph Cramer
Paul Hinnen
Henry Megens
Michael Kubis
Maurits van der Schaar
Kaustuve Bhatacharrya
Noelle Wright

A metrology concept is presented that is used for measuring the shape and position of resist patterns in the production of semiconductor devices. Some application examples are presented that demonstrate the capabilities of this concept.

Keywords:

Semiconductor device
Optical microscope
Metrology
Computational photography
Lithography
Refractive index
Nanotechnology
Resist
Materials science
Diffraction efficiency
AND gate
Optics

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