A method to increase performance in the transistors by providing a strain inducing semiconductor material embedded on the basis of a seed layer and respective semiconductor component

In complex semiconductor devices, transistors provided in an early manufacturing stage wherein an efficient strain-inducing mechanism is established by an embedded strain-inducing semiconductor alloy is used are manufactured on the basis of a metal gate electrode structure with large e,. In order to reduce the number of lattice defects and to a greater etch resistance in a critical zone, ie, to create a zone in which a schwellwertspannungseinstellende semiconductor alloy and the strain-inducing semiconductor material are disposed in close proximity to each other, is an efficient buffering material or a seed material, such as a silicon material incorporated during the selective epitaxial growth.