Microsensors based on GaN semiconductors covalently functionalized with luminescent Ru(II) complexes.

Covalent tethering of a Ru(II) dye to gallium nitride surfaces has been accomplished as a key step in the development of innovative sensing devices in which the indicator support (semiconductor) plays the role of both support and excitation source. Luminescence emission decays and time-resolved emission spectra confirm the presence of the dye on the semiconductor surfaces, while X-ray photoelectron spectroscopy proves its covalent bonding. The O2 sensitivity of the new device is comparable to those of other ruthenium-based sensor systems. This achievement paves the way to a new generation of integrable ultracompact microsensors that combine semiconductor emitter−probe assemblies.