Epitaxial EuO thin films by pulsed laser deposition monitored by in situ x-ray photoelectron spectroscopy

We have grown EuO thin films on silicon [001] and yttrium aluminate [110] from a europium metal target using pulsed laser deposition. In situ x-ray photoelectron spectroscopy has been used to determine the parameter window for stoichiometric EuO deposition. EuO is observed to grow in the relatively high pressure regime of 10−6–10−5 mbar, due to the large Eu flux during ablation. EuO is proven to grow epitaxially on yttrium aluminate [110]. Magnetization measurements confirm the stoichiometry of the film.