High density H2 and He plasmas: Can they be used to treat graphene?

Since graphene and other 2D materials have no bulk, a major issue is their sensitivity to surface contaminations, and the development of cleaning processes is mandatory. High density plasmas are attractive to treat (clean, dope, and pattern) 2D materials, because they are a mature industrial technology adapted to large area wafer. However, in these plasmas, the substrate is bombarded by a high flux of both thermal radicals and reactive ions with typical energy above 10 eV, which can easily damage atomic layer thin materials. We have investigated systematically the interaction of H2 and He inductively coupled plasmas (ICPs) with graphene in industrial reactors. We report a specific issue associated with the use of H2 plasma: they etch the inner part of plasma reactor walls, thus releasing impurities in the plasma, most notably O atoms that etch graphene and Si atoms which stick on it. The presence of parasitic oxygen presumably explains the discrepancies found in the literature regarding the impact of reac...