Group 13 manufacturing method and a manufacturing method of a semiconductor device of a metal nitride crystal

A process for producing a Group 13 metal nitride crystal, comprising performing the growth of a Group 13 metal nitride crystal in a solution or melt comprising an ionic solvent having dissolved therein a composite nitride containing a metal element belonging to Group 13 of the Periodic Table and a metal element other than Group 13 of the Periodic Table. According to this productionprocess, a good-quality Group 13 metal nitride crystal can be produced under low or atmospheric pressure by an industrially inexpensive method.