Optical study of strain-free GeSn nanowires

Here we describe a uniform diameter, direct bandgap Ge 1-x Sn x alloy nanowires, with a Sn incorporation up to 9%, the fabricated through a conventional catalytic bottom-up growth paradigm employing innovative catalysts and precursors. Optical characterization by means of temperature dependent photoluminescence is used to identify transition point from indirect to direct badgap of GeSn nanowires.