90nm Toggle MRAM Array with 0.29m 2 Cells

A 90nm Magnetoresistive Random Access Memory (MRAM) based on the toggle switching mode has been successfully demonstrated for the first time in a 90nm CMOS process. The MRAM memory cell is based on a 1-Transistor 1-Magnetic Tunnel Junction (1T1MTJ) with 0.29�m 2 bit cell. The results of the 4k bit array demonstrate scalability of MRAM to 90nm technology.