Preparation method of nitrogen-doped graphene thin film

The invention discloses a preparation method of a nitrogen-doped graphene thin film. The preparation method comprises the steps of implementing ultrasonic treatment to a graphite oxide water solution to obtain graphite oxide hydrosol; mixing a hydrazine hydrate solution with an ethanol solution to obtain a mixing solution of hydrazine hydrate, ethanol and water; mixing the two solutions and implementing reaction for 0.5-1.5 hours at 80-95 DEG C, carrying out vacuum filtration on the treated solution to obtain nitrogen-doped graphene thin film, drying at room temperature, implementing thermal annealing for 1-3 hours under a vacuum condition, and pressing for 0.5-2 hours under 1000-4000Psi to obtain high thermal-conductivity nitrogen-doped graphene thin film. The nitrogen-doped graphene thin film prepared by the preparation method has the advantages of high thermal conductivity and good mechanical property.