MOCVD regrowth of semi-insulating InP and p-n junction blocking layers around laser active stripes

Abstract The deposition of semi-insulating InP and the realization of a p-n junction by pulsed metalorganic epitaxy improves the regrowth adjacent to tall mesa stripes, avoiding a polycrystalline deposit on the SiN x mask and bumps formation near the edges. By this growth technique, three different buried laser were obtained: conventional buried ridge structure BRS, multi-junction planar buried heterostructure MJ-PBH and semi-insulating buried ridge structure SI-BRS. Static and dynamic characteristics show good lateral current blocking properties in SI compared to MJ and conventional BRS structure.