Investigation of p-CuO/n-Cu1-xInxO core/shell nanowire structure performance in UV photodetectors

Abstract We report on the formation of a pn junction through the use of CuO/Cu 1-x In x O core/shell nanowire (NW) structures for application in photodetectors. The CuO NWs arrays were prepared by simple heat-treatment of Cu foil at 500 °C in ambient air in a furnace. The Cu 1-x In x O nanocomposites synthesized by reflux condensation were drop-casted onto prepared p -CuO NWs arrays to form a core/shell pn junction. Investigation of Cu 1-x In x O nanocomposites containing differing amounts of In 2 O 3 (from pure CuO nanocomposites to nanocomposites including 80% In 2 O 3 ) exhibits the changed electrical polarity that varies from p-type to n-type. Following the formation of the indium tin oxide (ITO) electrode on the Cu 1-x In x O shell surface, the observed current–voltage (I–V) curves clearly showed typical rectifying p-n diode characteristics. Our suggested p-n heterojunction yielded a 3.48-fold increase in photocurrent level upon Xe lamp illumination when compared with current in the dark state. Additionally, the fabricated core/shell p-n junction exhibited a photoresponsivity of 0.045 A/W at 374 nm.