Selective Area growth of GaSb nano-templates on GaAs (001) using atomic hydrogen assisted Molecular Beam Epitaxy

We investigate the growth conditions for Selective Area Molecular Beam Epitaxy of GaSb on (001) GaAs inside SiO 2 nano-stripes. We show that the use of an atomic hydrogen flux during the growth promote selective epitaxy at low temperature where a few micron long GaSb nanowires can be obtained both in [110] and [110] orientation. Furthermore, we demonstrate that reducing the Sb/Ga flux ratio during growth leads to an improved GaSb relaxation along [110] and line continuity along [110].