Controlled vapour-phase deposition synthesis and growth mechanism of Bi2Te3 nanostructures

This work presents a study on the controlled growth and the growth mechanism of vapour-phase deposited two-dimensional Bi2Te3 nanostructures by investigating the influence of growth conditions on the morphology of Bi2Te3 nanostructures. The formation of a hexagonal plate geometry for Bi2Te3 nanostructures is a consequence of the large difference in growth rate between crystal facets along 〈0001〉 and 〈11 2¯0〉 directions. Under low Ar carrier gas flow rates (60–100 sccm), the growth of Bi2Te3 nanoplates occurs in the mass-transport limited regime, whereas under high carrier gas flow rates (130 sccm), the growth of Bi2Te3 nanoplates is in the surface-reaction limited regime. This leads to an increase in the lateral size of Bi2Te3 nanoplates with increasing the Ar carrier gas flow rate from 60 to 100 sccm, and a decrease in size for a flow rate of 130 sccm. In addition, the lateral size of Bi2Te3 nanoplates was found to increase with increasing growth time due to the kinetic characteristics of material growth...