MO-CVD growth of InGaAs using Me3Ga, AsMe3, AsH3 and Me3In or Et3 in and analyses of adducts formed during the growth process

High quality InGaAs films have been grown using the adduct Me3In.AsMe3 to block the room temperature reaction between Me3In and AsH3 and by using a cover piece to prevent the preferential evaporation of phosphorus from the InP substrate during the warm up. Infrared spectroscopy shows that Me3Ga + AsMe3 and Me3 Ga + AsH3. form stable adducts at room temperature, Me3In + AsMe3, probably form a stable adduct, while Et3In + AsMe3 probaoly do not form a stable Lewis acid/base adduct. Poorer quality films are grown with Et3In than with Me3 In because the AsMe3 is unable to prevent by adduct formation the room temperature reaction between Et3In and AsH3. Pyrolysis studies show that the individual alkyls are stable to‒400×C and mixtures are stable to‒350×C. The problems associated with the lower vapor pressure of the adducts, adduct dissociation at room temperature and the growth temperature, and using an adduct as the starting material are discussed.