Sidewall imaging transfer process with several critical dimensions

An embodiment of the present invention provides a method for forming a semiconductor device having a plurality of critical dimensions in a process for transfer of pictures of side walls. The method includes forming a dielectric layer having a plurality of levels over a plurality of mandrels, wherein the dielectric layer having a plurality of levels comprises a plurality of regions which cover the plurality of mandrels, wherein the plurality of regions of the dielectric layer having a plurality of levels different thicknesses having; etching the plurality of regions of the dielectric layer having a plurality of levels into spacers by a directional etch process is applied, wherein the spacers are formed directly adjacent side walls of the plurality of mandrels, and have different widths, with different thicknesses of the plurality of regions of the dielectric correspond layer having a plurality of levels; removing the plurality of mandrels between the spacers; and a transferring images of the subpages of the spacers in one or more layers below the spacer.