Thermal and temporal evolution of microstructure in polycrystalline ZnO

Tug between electronics and spintronics has opened up new area of research named as dilute magnetic semiconductors (DMS), ZnO is one of the most reliable candidates for spintronic devices and DMS. Since, pure and transition metal doped polycrystalline ZnO shows room temperature ferromagnetism, therefore it is very important to gain insight into its microstructure (MS) evolution. We report thermal evolution of MS of pure ZnO on sintering it at 200 °C, 400 °C, 600 °C, and 800 °C in ambient atmosphere for two hours. Temporal evolution at fixed temperature was analyzed using mean field model of internal energy and entropy. Grain size of ZnO MS were analyzed using integral breadth method of X-ray diffraction (XRD) lines using Voigt profile fit,. XRD line corresponding to [101] plane shifts from 36.17° to 36.28° whereas grain size increases from 67.5 nm to 93.7 nm with increase of temperature from 23°C to 800°C respectively. Grain growth with increase of temperature show Arrhenius type behavior with activation ...