From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction

Abstract In this review the effect of the growth process on the formation of defects in the hetero-epitaxial 3C-SiC film and the possible path for defects reduction has been reported. In our analysis of the experimental data we started from the realization of the carbonization layer, the defects at the interface and in the silicon substrate, to the growth of thin and even very thick layers. The discussion has been focalized on the growth on planar blanket Si substrates without the presence of structures or specific buffer layers. Both Chemical Vapour Deposition (CVD) and Sublimation Epitaxy (SE) processes have been reported and studied in detail.