High quality and uniformity GaN grown on 150 mm Si substrate using in-situ NH3 pulse flow cleaning process

Abstract By using in-situ NH 3 pulse flow cleaning method, we have achieved the repeated growth of high quality and uniformity GaN and AlGaN/GaN high electron mobility transistors (HEMTs) on 150 mm Si substrate. The two dimensional electron gas (2DEG) mobility is 2200 cm 2 /Vs with an electron density of 7.3 × 10 12  cm −2 . The sheet resistance is 305 ± 4 Ω/□ with ±1.3% variation. The achievement is attributed to the fact that this method can significantly remove the Al, Ga, etc. metal droplets coating on the post growth flow flange and reactor wall which are difficult to clean by normal bake process under H 2 ambient.