Annealing behavior of Pd/GaN (0001) microstructure

Abstract We reveal the existence of interfacial, epitaxial, Pd grains in an as-deposited Pd film evaporated on GaN (0001) at room temperature. The origin of the Pd epitaxy was attributed to 6/7 matched interface structure. The Pd film was completely transformed to Ga 2 Pd 5 and Ga 5 Pd gallides in epitaxial relationships with GaN at an annealing temperature of 700°C.