Preparation and characterization of single crystalline In–Sn oxide nanowires

Abstract Indium tin oxide (ITO; Indium oxide with tin doping) nanowires were first prepared via the electrochemical deposition and an oxidization method based on an AAO template. FE-SEM results show the synthesized ITO nanowires to have an approximate length of 8–10 μm with an aspect ratio close to 167. ITO nanowires with an In/Sn weight ratio of 8.8 (∼9:1) were observed from EDS. The crystal structure of ITO nanowires showed that all the peaks within the spectra can be indexed to In 2 O 3 with a cubic structure. The ITO nanowire is single-crystalline determined from selected area electron diffraction (SAED) patterns. An optical energy gap ( E g ) of the ITO nanowire is 3.8 eV.