Room-Temperature Si-Compatible Red Light Emission from In 2 Se 3 -Decorated Silicon Nanowires

Next generation of Si-based nano-optoelectronic devices calls for monolithic integration of photonics with silicon. Here we report the synthesis of silicon nanowires with In 2 Se 3 nanoflakes decorated by a one-step chemical vapor deposition under atmospheric pressure. These nanowires show pronounced red emission with wavelength in the range of 620-850 nm at room temperature under illumination of continuous wave laser. The strong emission originates from the photoluminescence of ultra-thin In 2 Se 3 nanoflakes in view of the nanoscale footprint and atomically-thin thicknesses as well as high single-quality of the In 2 Se 3 nanoflakes. This work demonstrated that nanoscale atomically-thin In 2 Se 3 flakes can grow epitaxially on the surface of single-crystalline silicon nanowires and serves as strong red light emission centers for silicon nanowires. Therefore, these nanowires are promising to be used as a Si-compatible red light emission material for Si-based integrated nano-optoelectronic devices.