Variation of doping type for sige optical modular with NPN configuration

This project proposed the design of SiGe optical modulator with NPN configuration by using Silvaco application. The accurate design is required to develop the best performance of optical modulator device The designs are develop using instruction in DECKBUILD. The doping type for the design will be chance using 3 different type of material which is Boron, Aluminum and Indium for P+ doping while Antimony, Phosphorus and Arsenic for N+ doping. The performance of each doping type will be determine using the beam propagation method (BPM). A different performance when varying doping material is expected to be developed. The parameter which has been analysis is refractive index and absorption loss. From the simulation and analysis, it was observed that doping material using Antimony as N+ and Indium as P+ give the highest reflection index change compare to other material. While doping material using Phosphorus as N+ and Boron as P+ give the lowest absorption loss compare to other material.