High temperature reliable epitaxially grown quantum dot lasers on (001) Si with record performance

Chen Shang,Eamonn T Hughes,Yating Wan,Mario Dumont,Rosalyn Koscica,Jennifer Selvidge,Robert W. Herrick,Arthur C. Gossard,Kunal Mukherjee,John E. Bowers

High temperature reliable epitaxially grown quantum dot lasers on (001) Si with record performance

2021

Chen Shang
Eamonn T Hughes
Yating Wan
Mario Dumont
Rosalyn Koscica
Jennifer Selvidge
Robert W. Herrick
Arthur C. Gossard
Kunal Mukherjee
John E. Bowers

We report a novel solution to the high temperature reliability of InAs quantum dot lasers grown on (001) Si. Negligible degradation was observed after 1800 h aging, giving an extrapolated lifetime of two million hours.

Keywords:

Reliability (semiconductor)
Silicon
Epitaxy
Optoelectronics
Quantum dot laser
Materials science
Degradation (geology)
Indium arsenide

Correction
Source
Cite
Save
Machine Reading By IdeaReader

References

Citations