Independent (Al, Ga, In) N and division method for forming the same

Comprising the steps of: providing a sacrificial template that can be adapted to the epitaxial (12), a single crystal (Al, Ga, In) N material (16) is deposited on the mold plate (12), the sacrificial template and (12) (Al , Ga, in) composite sacrificial containing a surfactant (14) between the N material (16) plate / (Al, Ga, in) forming the N article (10), the composite sacrificial template / (Al , Ga, in) N article (10) and the interface modifying divides sacrificial plate (12) (Al, Ga, from in) N material (16), independently (Al, Ga, in) N article ( independently by steps including a step of causing 10), the (Al, Ga, In) N method of forming an article (10). Such methods independently manufactured by (Al, Ga, In) N article (10) has an excellent morphological characteristics, for use as a substrate, for example, microelectronic and / or optoelectronic devices and it is suitable for fabricating a device precursor structure.