A novel technique for p‐type doping of ZnSe

Thermally cracked nitric oxide (NO) has been used to grow heavily doped p‐type ZnSe layers. Net acceptor densities as high as ∼4×1018 cm−3 were obtained, as determined by capacitance–voltage profiling, in molecular beam epitaxial growth at 250 °C. Cracker efficiency as a function of temperature and the nitric oxide flow rate is discussed and correlated with the doping level in the epitaxial layer.