Rapid growth of single-crystal graphene by acetonitrile and its nitrogen doping

Abstract In this work, we used acetonitrile a liquid carbon source as precursors to grow nitrogen doped single-crystal graphene by chemical vapor deposition. Faster growth of graphene single crystal with acetonitrile liquid carbon source precursors than that of methane has been realized, and nitrogen was doped in the domain successfully. The growth rate of nitrogen doped single-crystal graphene was up to 20.25 μm min−1. The atomic percentage of N in the sample was about 2.29%. The measured mobility of our samples was found about 644 cm2V−1s−1, which was much higher than many of the N-doped graphene reported previously. We provided a reliable synthetic route for the production of high-quality nitrogen doped single-crystal graphene, which was conducive to its wide applications and commercial productions.