P-type trigate nano wires: Impact of nano wire thickness and Si 0.7 Ge 0.3 source-drain epitaxy

The impact of nanowire (NW) height and Si 0.7 Ge 0.3 :B source-drain (S/D) on the performance of p-type trigate NW is presented. We show that an increase in Si NW height from 14.5nm to 24nm generates up to +30% enhancement in hole effective mobility for a 13nm NW width. Effectiveness of Sio.7Geo.3:B S/D is then discussed for a wide range of NW width (13nm Nw 0.7 Ge 0.3 :B S/D: +86% I on improvement is observed for H Nw =11nm against only +58% for H Nw =24nm.