A review of the synthesis of reduced defect density InxGa1−xN for all indium compositions

Abstract A review of metal rich and nitrogen rich (N-rich), low-temperature grown In x Ga 1−x N is provided, focusing on two low-temperature approaches that have resulted in non-phase separated In x Ga 1−x N. The metal modulated epitaxy (MME) and N-rich, low temperature approaches to the reduction of defects in In x Ga 1−x N are described and are capable of growing In x Ga 1−x N throughout the miscibility gap. MME films remain smooth at all thicknesses but show device quality material primarily for x   0.6. Low temperature, N-rich grown films show a critical thickness extend well beyond the theoretical values and results in slower relaxation through the 0.2  x Ga 1−x N substrates are necessary to increase design freedom, as well as improve optoelectronic device performance. Initial results with films up to 800 nm are shown to display evidence of defect annihilation which could be promising for future thick optoelectronic templates and thick devices.