High-power Al-free buried InGaAsP/GaAs (/spl lambda/ = 0.8/spl mu/m) Laser Diodes

D. Z. Garbuzov,N.Y. Antonishkis,N. D. Ilinskaya,S. N. Zhigulin,N. I. Katsavets,A. V. Kochergin,V.Z. Pyataev,M. V. Fuksman

High-power Al-free buried InGaAsP/GaAs (/spl lambda/ = 0.8/spl mu/m) Laser Diodes

1992

D. Z. Garbuzov
N.Y. Antonishkis
N. D. Ilinskaya
S. N. Zhigulin
N. I. Katsavets
A. V. Kochergin
V.Z. Pyataev
M. V. Fuksman

Al-free InGaAsP/GaAs SCH SQW (/spl lambda/=0.8 /spl mu/m) single-mode buried laser diodEs having parameters comparable with the best achievements for AlGaAs/GaAs diodes have been fabricated for the first time.

Keywords:

Optoelectronics
Optics
Laser diode
Physics
Laser
Gallium arsenide
Diode
Lambda

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