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M. V. Fuksman
M. V. Fuksman
Russian Academy of Sciences
Laser
Diode
Optoelectronics
Optics
Physics
5
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15
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High‐power buried InGaAsP/GaAs (λ=0.8 μm) laser diodes
1993
Applied Physics Letters
D.Z. Garbuzov
N. Ju. Antonishkis
S. N. Zhigulin
N. D. Il’inskaya
A. V. Kochergin
D. A. Lifshitz
Edik U. Rafailov
M. V. Fuksman
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Citations (14)
High-power buried InGaAsP/GaAs (lambda = 0.8 micron) laser diodes
1993
Applied Physics Letters
Dmitri Z. Garbuzov
N. Iu. Antonishkis
S. N. Zhigulin
N. D. IlInskaia
A. V. Kochergin
Daniel A. Lifshits
Edik U. Rafailov
M. V. Fuksman
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High-power Al-free buried InGaAsP/GaAs (/spl lambda/ = 0.8/spl mu/m) Laser Diodes
1992
ISLC | International Semiconductor Laser Conference
D. Z. Garbuzov
N.Y. Antonishkis
N. D. Ilinskaya
S. N. Zhigulin
N. I. Katsavets
A. V. Kochergin
V.Z. Pyataev
M. V. Fuksman
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Citations (1)
High-power Al-free buried InGaAsP/GaAs (/spl lambda/ = 0.8/spl mu/m) Laser Diodes
1992
ISLC | International Semiconductor Laser Conference
D. Z. Garbuzov
N.Y. Antonishkis
N. D. Il’inskaya
S. N. Zhigulin
N. I. Katsavets
A. V. Kochergin
V.Z. Pyataev
M. V. Fuksman
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High-Power AI-Free Buried InGaAsP/GaAs (A =0.8 ,urn) Laser Diodes
1991
D. Z. Garbuzov
N.Y. Antonishkis
S. N. Zhigulin
N. I. Katsavets
A. V. Kochergin
V.Z. Pyataev
M. V. Fuksman
A. F. Ioffe
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