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V.Z. Pyataev
V.Z. Pyataev
Optoelectronics
Laser
Diode
Optics
Physics
3
Papers
1
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0
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High-power Al-free buried InGaAsP/GaAs (/spl lambda/ = 0.8/spl mu/m) Laser Diodes
1992
ISLC | International Semiconductor Laser Conference
D. Z. Garbuzov
N.Y. Antonishkis
N. D. Ilinskaya
S. N. Zhigulin
N. I. Katsavets
A. V. Kochergin
V.Z. Pyataev
M. V. Fuksman
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High-power Al-free buried InGaAsP/GaAs (/spl lambda/ = 0.8/spl mu/m) Laser Diodes
1992
ISLC | International Semiconductor Laser Conference
D. Z. Garbuzov
N.Y. Antonishkis
N. D. Il’inskaya
S. N. Zhigulin
N. I. Katsavets
A. V. Kochergin
V.Z. Pyataev
M. V. Fuksman
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High-Power AI-Free Buried InGaAsP/GaAs (A =0.8 ,urn) Laser Diodes
1991
D. Z. Garbuzov
N.Y. Antonishkis
S. N. Zhigulin
N. I. Katsavets
A. V. Kochergin
V.Z. Pyataev
M. V. Fuksman
A. F. Ioffe
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