Site-selectively Grown p-type Ge NWs as a Gas Sensor

Abstract Ge NWs have been selectively grown directly on top of the suspended microhotplates, with heater and interdigitated electrodes, via Au catalyzed Vapor Liquid Solid (VLS) mechanism through a low-power consumption CVD-like process. The so-fabricated devices, with a p-type semiconductors behavior, have been characterized towards water vapor in synthetic air, keeping the temperature at 100°C in order to achieve a stable oxide. The results show reproducible responses towards H 2 O.